Discrete Semiconductor Products

GBPC3501T

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BRIDGE RECT 1PHASE 100V 35A GBPC

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Discrete Semiconductor Products

Active

BRIDGE RECT 1PHASE 100V 35A GBPC

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC3501T

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square
Package / Case	GBPC
Supplier Device Package	GBPC
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	100 V

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Package / Case	Package / Case
GeneSiC Semiconductor GBPC3501W	Standard	150 °C	-55 °C	Through Hole	100 V	Single Phase	35 A	1.1 V	5 µA	GBPC-W	4-Square GBPC-W
GeneSiC Semiconductor GBPC3501T	Standard	150 °C	-55 °C	QC Terminal	100 V	Single Phase	35 A	1.1 V	5 µA	GBPC		4-Square	GBPC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 100 V QC Terminal GBPC

Technical documentation and resources