Integrated Circuits (ICs)

IS61NLP51236-200B3LI

Obsolete

ISSI, Integrated Silicon Solution Inc

SRAM CHIP SYNC QUAD 3.3V 18M-BIT 512K X 36 3.1NS 165-PIN BGA

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Integrated Circuits (ICs)

IS61NLP51236-200B3LI

Obsolete

ISSI, Integrated Silicon Solution Inc

SRAM CHIP SYNC QUAD 3.3V 18M-BIT 512K X 36 3.1NS 165-PIN BGA

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IS61NLP51236-200B3LI

Access Time	3.1 ns
Clock Frequency	200 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	512 K
Memory Organization [custom]	36
Memory Size	18 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	165-TBGA
Supplier Device Package	165-TFBGA (13x15)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

IS61NLP51236 Series

Part	Access Time	Mounting Type	Memory Size	Clock Frequency	Memory Format	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Memory Organization [custom]	Memory Organization [custom]	Package / Case
ISSI, Integrated Silicon Solution Inc IS61NLP51236-250TQLI-TR	2.6 ns	Surface Mount	18 Mbit	250 MHz	SRAM	Parallel	85 C	-40 ¯C	100-LQFP (14x20)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200B3-TR	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	70 °C	0 °C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200B3LI	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200B3LI	3 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200TQLI-TR	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	100-LQFP (14x20)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200B3I	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200B3LI-TR	3 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200B3LI-TR	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	165-TFBGA (13x15)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP51236-200TQLI	3.1 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	100-LQFP (14x20)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200TQLI	3 ns	Surface Mount	18 Mbit	200 MHz	SRAM	Parallel	85 C	-40 ¯C	100-LQFP (14x20)	SRAM - Synchronous SDR	3.135 V	3.465 V	Volatile	512 K	36	100-LQFP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 19.87

Description

General part information

IS61NLP51236 Series

100 percent bus utilization

No wait cycles between Read and Write

Internal self-timed write cycle

Documents

Technical documentation and resources

No documents available