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ONSEMI BAS40LT1G
Discrete Semiconductor Products

NSS20200LT1G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, PNP, -20 V, -2.0 A

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ONSEMI BAS40LT1G
Discrete Semiconductor Products

NSS20200LT1G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, PNP, -20 V, -2.0 A

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS20200LT1G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic [Max]180 mV
Voltage - Collector Emitter Breakdown (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.35
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
Digi-Reel® 1$ 0.35
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
Tape & Reel (TR) 3000$ 0.10
6000$ 0.09
9000$ 0.08
30000$ 0.08
75000$ 0.08
NewarkEach (Supplied on Cut Tape) 1$ 0.52
10$ 0.35
25$ 0.29
50$ 0.24
100$ 0.19
250$ 0.19
500$ 0.18
ON SemiconductorN/A 1$ 0.08

Description

General part information

NSS20200L Series

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.