Discrete Semiconductor Products

SIA920DJ-T1-GE3

Obsolete

MOSFET 2N-CH 8V 4.5A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 8V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA920DJ-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	4.5 A, 4.5 A
Drain to Source Voltage (Vdss)	8 V
FET Feature	Logic Level Gate
Gate Charge (Max)	7.5 nC
Input Capacitance (Ciss) (Max)	470 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAKÛ SC-70-6 Dual, PowerPAK® SC-70-6 Dual
Package Name	PowerPAKÛ SC-70-6 Dual, PowerPAK® SC-70-6 Dual
Power - Max	7.8 W
Rds On (Max)	27 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	700 mV

Part	Package Name	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Current - Continuous Drain (Id)	Vgs(th) (Max)	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max)	Power - Max	Channel Count	Configuration	Configuration - Features	FET Feature	Gate Charge (Max)
Vishay Dale SIA920DJ-T1-GE3	PowerPAK® SC-70-6 Dual PowerPAKÛ SC-70-6 Dual	PowerPAK® SC-70-6 Dual PowerPAKÛ SC-70-6 Dual	150 °C	-55 °C	4.5 A 4.5 A	700 mV	27 mOhm	MOSFET (Metal Oxide)	8 V	Surface Mount	470 pF	7.8 W	2	N-Channel	Dual	Logic Level Gate	7.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

Mosfet Array 8V 4.5A 7.8W Surface Mount PowerPAKÛ SC-70-6 Dual

Technical documentation and resources