Discrete Semiconductor Products

SIA920DJ-T1-GE3

Obsolete

MOSFET 2N-CH 8V 4.5A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 8V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA920DJ-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25¯C	4.5 A
Drain to Source Voltage (Vdss)	8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAKÛ SC-70-6 Dual
Power - Max [Max]	7.8 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	PowerPAKÛ SC-70-6 Dual
Technology	MOSFET (Metal Oxide)

Part	FET Feature	Mounting Type	Current - Continuous Drain (Id) @ 25¯C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SIA920DJ-T1-GE3	Logic Level Gate	Surface Mount	4.5 A	7.5 nC	PowerPAKÛ SC-70-6 Dual	PowerPAKÛ SC-70-6 Dual	2 N-Channel (Dual)	8 V	-55 °C	150 °C	470 pF	27 mOhm	MOSFET (Metal Oxide)	7.8 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 8V 4.5A 7.8W Surface Mount PowerPAKÛ SC-70-6 Dual

Technical documentation and resources