Discrete Semiconductor Products

BCX70G

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BCX70G

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor BCX70G	SOT-23-3	20 nA	350 mW	45 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	550 mV	120	NPN	200 mA	125 MHz
ON Semiconductor BCX70J	SOT-23-3	20 nA	350 mW	45 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	550 mV		NPN	200 mA	125 MHz	250

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources