Specification	FGP5N60LS

Current - Collector Pulsed (Icm)	36 A
Gate Charge	18.3 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	83 W
Supplier Device Package	TO-220-3
Switching Energy	130 µJ, 38 µJ
Td (on/off) @ 25°C	4.3 ns, 36 ns
Test Condition [custom]	10 Ohm
Test Condition [custom]	15 V, 400 V
Test Condition [custom]	5 A
Vce(on) (Max) @ Vge, Ic	3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGP5N60LS Series

IGBT, 600V, 5A, Field Stop

Part	IGBT Type	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	Current - Collector Pulsed (Icm)	Mounting Type	Td (on/off) @ 25°C	Supplier Device Package	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGP5N60LS	Field Stop	10 Ohm	15 V 400 V	5 A	600 V	TO-220-3	83 W	36 A	Through Hole	4.3 ns 36 ns	TO-220-3	18.3 nC	-55 °C	150 °C	38 µJ 130 µJ	3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGP5N60LS Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.