Discrete Semiconductor Products

BFU730F,115

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TRANS GP BJT NPN 2.8V 0.03A 4-PIN(3+TAB) DFP T/R ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 2.8V 0.03A 4-PIN(3+TAB) DFP T/R ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFU730F,115

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	205 hFE
Frequency - Transition	55 GHz
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.3 dB
Noise Figure (dB Typ @ f) [Min]	0.8 dB
Operating Temperature	150 °C
Package / Case	SOT-343F
Power - Max [Max]	197 mW
Supplier Device Package	4-DFP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.8 V

Part	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Supplier Device Package	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Gain	Noise Figure (dB Typ @ f)
Freescale Semiconductor - NXP BFU730F,115	55 GHz	30 mA	197 mW	150 °C	4-DFP	Surface Mount	SOT-343F	2.8 V	1.3 dB	0.8 dB	NPN	205 hFE
Freescale Semiconductor - NXP BFU730LXZ	53 GHz	30 mA	160 mW		DFN1006C-3	Surface Mount	3-XFDFN	3 V			NPN	205 hFE	15.8 dB	0.75 dB

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General part information

RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP

Technical documentation and resources