Discrete Semiconductor Products

NGTB25N120SWG

Obsolete

ON Semiconductor

IGBT, 1200V/25A - WELDING

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DocumentsPackage Drawing-340AL-TO-247 Datasheet +1

Discrete Semiconductor Products

NGTB25N120SWG

Obsolete

ON Semiconductor

IGBT, 1200V/25A - WELDING

Deep-Dive with AI

DocumentsPackage Drawing-340AL-TO-247 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB25N120SWG

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	178 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	385 W
Reverse Recovery Time (trr)	154 ns
Supplier Device Package	TO-247-3
Switching Energy	1.95 mJ, 600 µJ
Td (on/off) @ 25°C	87 ns
Td (on/off) @ 25°C	179 ns
Test Condition	15 V, 10 Ohm, 25 A, 600 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

NGTB25N120FL3 Series

IGBT 1200V 25A FS1 Induction Heating

Part	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector (Ic) (Max)	Package / Case	IGBT Type	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Test Condition	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
ON Semiconductor NGTB25N120LWG	89 ns 235 ns	200 nC	1200 V	3.4 mJ 800 µJ	Through Hole	-55 °C	150 °C	TO-247-3	50 A	TO-247-3	Trench Field Stop	200 A	2.3 V	192 W	10 Ohm 15 V 25 A 600 V
ON Semiconductor NGTB25N120FL2WAG		181 nC	1200 V	660 µJ 990 µJ	Through Hole	-55 °C	175 ░C	TO-247-4L		TO-247-4	Field Stop	100 A	2.4 V	385 W	10 Ohm 15 V 50 A 600 V	17 ns 113 ns	100 A	136 ns
ON Semiconductor NGTB25N120SWG		178 nC	1200 V	1.95 mJ 600 µJ	Through Hole	-55 °C	175 ░C	TO-247-3	50 A	TO-247-3	Trench	100 A	2.4 V	385 W	10 Ohm 15 V 25 A 600 V	87 ns		154 ns	179 ns
ON Semiconductor NGTB25N120IHLWG	235 ns	200 nC	1200 V	800 µJ	Through Hole	-55 °C	150 °C	TO-247-3	50 A	TO-247-3		200 A	2.3 V	192 W	10 Ohm 15 V 25 A 600 V
ON Semiconductor NGTB25N120FLWG		220 nC	1200 V	1.5 mJ 950 µJ	Through Hole	-55 °C	150 °C	TO-247-3	50 A	TO-247-3	Trench Field Stop	200 A	2.2 V	192 W	10 Ohm 15 V 25 A 600 V	91 ns		240 ns	228 ns
ON Semiconductor NGTB25N120FL2WG		178 nC	1200 V	1.95 mJ 600 µJ	Through Hole	-55 °C	175 ░C	TO-247-3	50 A	TO-247-3	Field Stop	100 A	2.4 V	385 W	10 Ohm 15 V 25 A 600 V	87 ns		154 ns	179 ns
ON Semiconductor NGTB25N120FL3WG		136 nC	1200 V	1 mJ 700 µJ	Through Hole	-55 °C	175 ░C	TO-247-3		TO-247-3	Trench Field Stop	100 A	2.4 V	349 W	10 Ohm 15 V 25 A 600 V	15 ns	100 A	114 ns	109 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB25N120FL3 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.