Discrete Semiconductor Products
R6006KNXC7G
ActiveRohm Semiconductor
600V 6A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
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Discrete Semiconductor Products
R6006KNXC7G
ActiveRohm Semiconductor
600V 6A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6006KNXC7G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 350 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 830 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6006PND3FRA Series
R6006PND3FRA is power MOSFET with Low on-resistance and Fast switching speed by Super Junction Technology. This is a high-reliability product of automotive grade qualified to AEC-Q101, and suitable for switching applications.
Documents
Technical documentation and resources
