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TO-252AA
Discrete Semiconductor Products

FCD7N60TM

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 7 A, 600 MΩ, DPAK

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TO-252AA
Discrete Semiconductor Products

FCD7N60TM

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 7 A, 600 MΩ, DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFCD7N60TM
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds920 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.00
10$ 1.95
100$ 1.35
500$ 1.09
1000$ 1.01
Digi-Reel® 1$ 3.00
10$ 1.95
100$ 1.35
500$ 1.09
1000$ 1.01
Tape & Reel (TR) 2500$ 0.95
NewarkEach (Supplied on Full Reel) 1$ 1.31
3000$ 1.25
6000$ 1.14
12000$ 1.03
18000$ 0.98
30000$ 0.96
ON SemiconductorN/A 1$ 1.01

Description

General part information

FCD7N60 Series

SuperFET®MOSFET is a first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.