Discrete Semiconductor Products

PJQ5866A-AU_R2_000A1

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60V DUAL N-CHANNEL ENHANCEMENT M

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Discrete Semiconductor Products

Active

60V DUAL N-CHANNEL ENHANCEMENT M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5866A-AU_R2_000A1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A, 40 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1574 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	68.2 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Qualification	Technology	Power - Max	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id
Panjit International Inc. PJQ5866A-AU_R2_000A1	2 N-Channel (Dual)	60 V	175 °C	-55 °C	DFN5060B-8	7 A 40 A	Automotive	1574 pF	13.5 nC	AEC-Q101	MOSFET (Metal Oxide)	2 W 68.2 W	8-PowerTDFN	17 mOhm	Surface Mount	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 7A (Ta), 40A (Tc) 2W (Ta), 68.2W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources