Specification	MBR8H100MFST1G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	8-PowerTDFN, 5 Leads
Speed	200 mA, 500 ns
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	900 mV

MBR8H100MFS Series

8 A, 100 V Schottky Diode in SO-8FL

Part	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Supplier Device Package	Technology	Speed	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor MBR8H100MFST1G	8 A	175 ░C	-55 C	8-PowerTDFN 5 Leads	2 µA	100 V	Surface Mount	5-DFN (5x6)	8-SOFL	Schottky	200 mA 500 ns	900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

8 A, 100 V Schottky Diode in SO-8FL

Technical documentation and resources