Discrete Semiconductor Products

NVTFS8D1N08HTAG

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80V T8 IN U8FL HEFET PACKAGE/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

80V T8 IN U8FL HEFET PACKAGE/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NVTFS8D1N08HTAG

Current - Continuous Drain (Id) @ 25°C	61 A, 14 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	75 W, 3.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.3 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Single N-Channel Power MOSFET 80V, 61A, 8.3mΩ

Part	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Qualification	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Grade	Package / Case
ON Semiconductor NVTFS8D1N08HTAG	8-WDFN (3.3x3.3)	20 V	80 V	1450 pF	4 V	8.3 mOhm	AEC-Q101	N-Channel	23 nC	-55 °C	175 ░C	14 A 61 A	MOSFET (Metal Oxide)	6 V 10 V	3.8 W 75 W	Surface Mount	Automotive	8-PowerWDFN

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General part information

Single N-Channel Power MOSFET 80V, 61A, 8.3mΩ

Technical documentation and resources