Discrete Semiconductor Products

FCH060N80-F155

NRND

TRANS MOSFET N-CH 800V 58A 3-PIN(3+TAB) TO-247 TUBE

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

TRANS MOSFET N-CH 800V 58A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	FCH060N80-F155

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	350 nC
Input Capacitance (Ciss) (Max) @ Vds	14685 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package
ON Semiconductor FCH060N80-F155	14685 pF	800 V	20 V	TO-247-3	56 A	60 mOhm	500 W	-55 °C	150 °C	350 nC	MOSFET (Metal Oxide)	10 V	Through Hole	4.5 V	N-Channel	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 56A (Tc) 500W (Tc) Through Hole TO-247-3

Technical documentation and resources