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TO-262
Discrete Semiconductor Products

VS-MURB820-1-M3

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TO-262
Discrete Semiconductor Products

VS-MURB820-1-M3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-MURB820-1-M3
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-262AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If975 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 8000$ 0.34

Description

General part information

MURB820 Series

Diode 200 V 8A Through Hole TO-262AA

Documents

Technical documentation and resources