Discrete Semiconductor Products

VS-8TQ060-M3

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DIODE SCHOTTKY 60V 8A TO220AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 60V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-8TQ060-M3

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	550 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Supplier Device Package	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division VS-8TQ060PBF	720 mV	8 A	200 mA 500 ns	550 µA	175 ░C	-55 C	Schottky	60 V	TO-220-2	Through Hole	TO-220AC
Vishay General Semiconductor - Diodes Division VS-8TQ060-M3	880 mV	8 A	200 mA 500 ns	550 µA	175 ░C	-55 C	Schottky	60 V	TO-220-2	Through Hole	TO-220AC	500 pF

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General part information

Diode 60 V 8A Through Hole TO-220AC

Technical documentation and resources