Discrete Semiconductor Products

FDS3170N7

Obsolete

MOSFET N-CH 100V 6.7A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 6.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	FDS3170N7

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	2714 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	8-SO FLMP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	FET Type	Package / Case	Package / Case	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS3170N7	20 V	77 nC	4 V	100 V	8-SO FLMP	MOSFET (Metal Oxide)	N-Channel	0.154 in	8-SOIC	3.9 mm	6 V 10 V	Surface Mount	6.7 A	2714 pF	26 mOhm	3 W	-55 °C	150 °C
ON Semiconductor FDS3170N7	20 V	77 nC	4 V	100 V	8-SO	MOSFET (Metal Oxide)	N-Channel		8-SOIC		6 V 10 V	Surface Mount	6.7 A	2714 pF	26 mOhm	3 W	-55 °C	150 °C	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 6.7A (Ta) 3W (Ta) Surface Mount 8-SO FLMP

Technical documentation and resources