Discrete Semiconductor Products

FDP5N50

Obsolete

ON Semiconductor

MOSFET N-CH 500V 5A TO220-3

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Discrete Semiconductor Products

FDP5N50

Obsolete

ON Semiconductor

MOSFET N-CH 500V 5A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP5N50

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDP5N50NZ Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup> II, 500 V, 4.5 A, 1.5 Ω, TO-220

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Supplier Device Package	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FDP5N50NZ	4.5 A	TO-220-3	MOSFET (Metal Oxide)	TO-220-3	25 V	N-Channel	440 pF	78 W	-55 °C	150 °C	12 nC	1.5 Ohm	500 V	5 V	10 V	Through Hole
ON Semiconductor FDP5N50	5 A	TO-220-3	MOSFET (Metal Oxide)	TO-220-3	30 V	N-Channel			-55 °C	150 °C			500 V	5 V	10 V	Through Hole	1.4 Ohm	85 W
ON Semiconductor FDP5N50	5 A	TO-220-3	MOSFET (Metal Oxide)	TO-220-3	30 V	N-Channel			-55 °C	150 °C			500 V	5 V	10 V	Through Hole	1.4 Ohm	85 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	523	$ 0.57
		523	$ 0.57

Description

General part information

FDP5N50NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources