Integrated Circuits (ICs)

R1LV0108ESN-5SI#S0

Obsolete

Renesas Electronics Corporation

1MB ADVANCED LPSRAM (128K WORD X 8BIT)

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DocumentsR1LV0108E Series Datasheet

Integrated Circuits (ICs)

R1LV0108ESN-5SI#S0

Obsolete

Renesas Electronics Corporation

1MB ADVANCED LPSRAM (128K WORD X 8BIT)

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DocumentsR1LV0108E Series Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R1LV0108ESN-5SI#S0

Access Time	55 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	32-SOIC
Supplier Device Package	32-SOP
Technology	SRAM
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	55 ns
Write Cycle Time - Word, Page [custom]	55 ns

R1LV0108ESF-5SR Series

1Mb Advanced LPSRAM (128k word x 8bit)

Part	Access Time	Mounting Type	Memory Interface	Package / Case	Package / Case	Package / Case	Technology	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Memory Organization	Memory Size	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case [x]	Package / Case [custom]	Package / Case [x]
Renesas Electronics Corporation R1LV0108ESF-7SI#B0	70 ns	Surface Mount	Parallel	0.724 in	18.4 mm	32-TFSOP	SRAM	32-TSOP I	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	85 °C	-40 °C
Renesas Electronics Corporation R1LV0108ESP-5SI#B0	55 ns	Surface Mount	Parallel			32-SOIC	SRAM	32-SOP	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	85 °C	-40 °C	55 ns	55 ns
Renesas Electronics Corporation R1LV0108ESF-7SR#S0	70 ns	Surface Mount	Parallel	0.724 in	18.4 mm	32-TFSOP	SRAM	32-TSOP I	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	70 °C	0 °C
Renesas Electronics Corporation R1LV0108ESA-7SI#B0	70 ns	Surface Mount	Parallel				SRAM	32-TSOP I	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	85 °C	-40 °C			0.465 "	32-TFSOP	11.8 mm
Renesas Electronics Corporation R1LV0108ESF-5SR#B0	55 ns	Surface Mount	Parallel	0.724 in	18.4 mm	32-TFSOP	SRAM	32-TSOP I	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	70 °C	0 °C	55 ns	55 ns
Renesas Electronics Corporation R1LV0108ESF-7SR#B0	70 ns	Surface Mount	Parallel	0.724 in	18.4 mm	32-TFSOP	SRAM	32-TSOP	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	70 °C	0 °C
Renesas Electronics Corporation R1LV0108ESA-5SI#BX
Renesas Electronics Corporation R1LV0108ESF-5SR#S0	55 ns	Surface Mount	Parallel	0.724 in	18.4 mm	32-TFSOP	SRAM	32-TSOP I	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	70 °C	0 °C	55 ns	55 ns
Renesas Electronics Corporation R1LV0108ESN-5SI#S0	55 ns	Surface Mount	Parallel			32-SOIC	SRAM	32-SOP	2.7 V	3.6 V	Volatile	128K x 8	1 Mbit	SRAM	85 °C	-40 °C	55 ns	55 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

R1LV0108ESF-5SR Series

The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.

Documents

Technical documentation and resources

R1LV0108E Series Datasheet

Datasheet