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DCG010-TL-E
Discrete Semiconductor Products

FJX3007RTF

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NPN EPITAXIAL SILICON TRANSISTOR WITH BIAS RESISTOR

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DCG010-TL-E
Discrete Semiconductor Products

FJX3007RTF

Active
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR WITH BIAS RESISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationFJX3007RTF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]68
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Power - Max [Max]200 mW
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSC-70 (SOT323)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 11539$ 0.03
11539$ 0.03

Description

General part information

FJX3008R Series

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.