Discrete Semiconductor Products

SJPX-H3VL

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DIODE GEN PURP 300V 2A SJP

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Discrete Semiconductor Products

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DIODE GEN PURP 300V 2A SJP

Technical Specifications

Parameters and characteristics for this part

Specification	SJPX-H3VL

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	2-SMD, J-Lead
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	SJP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Supplier Device Package	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Sanken Electric USA Inc. SJPX-H3V	Surface Mount	SJP	Standard	2-SMD J-Lead	300 V	30 ns	-40 °C	150 °C	1.3 V	200 mA 500 ns	50 µA	2 A
Sanken Electric USA Inc. SJPX-H3VR	Surface Mount	SJP	Standard	2-SMD J-Lead	300 V	30 ns	-40 °C	150 °C	1.3 V	200 mA 500 ns	50 µA	2 A
Sanken Electric USA Inc. SJPX-H3VL	Surface Mount	SJP	Standard	2-SMD J-Lead	300 V	30 ns	-40 °C	150 °C	1.3 V	200 mA 500 ns	50 µA	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.24

General part information

Diode 300 V 2A Surface Mount SJP

Technical documentation and resources