Discrete Semiconductor Products

BAT86,133

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DIODE SCHOTTKY 50V 200MA DO34

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 50V 200MA DO34

Technical Specifications

Parameters and characteristics for this part

Specification	BAT86,133

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-34
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Operating Temperature - Junction	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case
Freescale Semiconductor - NXP BAT86,113	200 mA	4 ns	125 °C	Through Hole	DO-34	5 µA	Any Speed	200 mA	900 mV	50 V	Schottky	Axial DO-204AG DO-34
Freescale Semiconductor - NXP BAT86,133	200 mA	4 ns	125 °C	Through Hole	DO-34	5 µA	Any Speed	200 mA	900 mV	50 V	Schottky	Axial DO-204AG DO-34

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 200mA Through Hole DO-34

Technical documentation and resources