Specification	NTNS4C69NTCG

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds	75 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	178 mW
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	SOT-883, XDFN3
Supplier Device Package [x]	1
Supplier Device Package [y]	0.6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

NTNS4C69N Series

MOSFET, Single N−Channel Small Signal MOSFET, 30V, 1000mA, 155mΩ

Part	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Vgs (Max)
ON Semiconductor NTNS4C69NTCG	Surface Mount	1.1 V	0.9 nC	1.8 V 4.5 V	30 V	1 A	N-Channel	SOT-883 XDFN3	1	0.6	155 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	75 pF	178 mW	3-XFDFN	12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETSmall Signal MOSFET30 V, 1000 mA, Single N−ChannelSOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package