Specification	NSVBC114EPDXV6T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	35
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSBC114EPDXV6 Series

Complementary Bipolar Digital Transistor (BRT)

Part	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Grade	Qualification
ON Semiconductor NSBC114YDXV6T5G	SOT-563	SOT-563 SOT-666	250 mV	2 NPN - Pre-Biased (Dual)	80	500 mW	50 V	Surface Mount	500 nA	47000 Ohms	100 mA
ON Semiconductor NSVBC114YPDXV65G	SOT-563	SOT-563 SOT-666	250 mV	1 NPN 1 PNP	80	500 mW	50 V	Surface Mount	500 nA	47000 Ohms	100 mA	Automotive	AEC-Q101
ON Semiconductor NSVBC114YDXV6T1G	SOT-563	SOT-563 SOT-666	250 mV	2 NPN - Pre-Biased (Dual)	80	500 mW	50 V	Surface Mount	500 nA	47000 Ohms	100 mA	Automotive	AEC-Q101
ON Semiconductor NSBC114EPDXV6T5G	SOT-563	SOT-563 SOT-666	250 mV	1 NPN 1 PNP	35	500 mW	50 V	Surface Mount	500 nA	10 kOhms	100 mA
ON Semiconductor NSVBC114EPDXV6T1G	SOT-563	SOT-563 SOT-666	250 mV	1 NPN 1 PNP	35	500 mW	50 V	Surface Mount	500 nA	10 kOhms	100 mA	Automotive	AEC-Q101
ON Semiconductor NSVBC114YPDXV6T1G	SOT-563	SOT-563 SOT-666	250 mV	1 NPN 1 PNP	80	500 mW	50 V	Surface Mount	500 nA	47000 Ohms	100 mA	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 0.06

Description

General part information

NSBC114EPDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing