Discrete Semiconductor Products

SIA537EDJ-T1-GE3

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MOSFET N/P-CH 12V 4.5A SC70-6

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Discrete Semiconductor Products

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MOSFET N/P-CH 12V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA537EDJ-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V, 12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	7.8 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIA537EDJ-T1-GE3	12 V 20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	7.8 W	455 pF	Surface Mount	PowerPAK® SC-70-6 Dual	1 V	16 nC	PowerPAK® SC-70-6 Dual	28 mOhm	N and P-Channel	Logic Level Gate	4.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources