Discrete Semiconductor Products

CDBJSC3650-G

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DIODE SCHOTTKY SIC 650V 3A 2-PIN(2+TAB) TO-220 TUBE

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Discrete Semiconductor Products

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DIODE SCHOTTKY SIC 650V 3A 2-PIN(2+TAB) TO-220 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJSC3650-G

Capacitance @ Vr, F	190 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220F
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)
Comchip Technology CDBJSC3650-G	100 µA	650 V	SiC (Silicon Carbide) Schottky	No Recovery Time	175 ░C	-55 C	3 A	190 pF	Through Hole	1.7 V	TO-220-2 Full Pack	TO-220F	0 ns

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General part information

Diode 650 V 3A Through Hole TO-220F

Technical documentation and resources

No documents available