Specification	PQMH2Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	230 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	230 mW
Qualification	AEC-Q101
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	DFN1010B-6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PQMH2 Series

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Transistor Type	Resistor - Emitter Base (R2)	Supplier Device Package	Frequency - Transition	Qualification	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Grade	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
Nexperia USA Inc. PQMH2Z	80	47 kOhms	2 NPN - Pre-Biased (Dual)	47 kOhms	DFN1010B-6	230 MHz	AEC-Q101	150 mV	1 µA	100 mA	Surface Mount	Automotive	230 mW	6-XFDFN Exposed Pad	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources