Discrete Semiconductor Products

NTTFD9D0N06HLTWG

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MOSFET, POWER, 60V POWERTRENCH® POWER CLIP HALF BRIDGE CONFIGURATION

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Discrete Semiconductor Products

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MOSFET, POWER, 60V POWERTRENCH® POWER CLIP HALF BRIDGE CONFIGURATION

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFD9D0N06HLTWG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	38 A, 9 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds	948 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerWQFN
Power - Max [Max]	1.7 W, 26 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	12-WQFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

MOSFET, Power, 60V POWERTRENCH® Power Clip Half Bridge Configuration

Part	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTTFD9D0N06HLTWG	60 V	Surface Mount	9 A 38 A	MOSFET (Metal Oxide)	1.7 W 26 W	2 V	12-WQFN (3.3x3.3)	12-PowerWQFN	9 mOhm	-55 °C	150 °C	948 pF	2 N-Channel (Dual)	13.5 nC

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General part information

MOSFET, Power, 60V POWERTRENCH® Power Clip Symmetric Dual N-Channel, 9mΩ @ 10V, 80A, WQFN12 3.3x3.3mm

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