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2DB1184Q-13
Discrete Semiconductor Products

DMT6009LK3-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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2DB1184Q-13
Discrete Semiconductor Products

DMT6009LK3-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT6009LK3-13
Current - Continuous Drain (Id) @ 25°C57 A, 13.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC
Input Capacitance (Ciss) (Max) @ Vds1925 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.6 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.52
10$ 0.94
100$ 0.63
500$ 0.51
1000$ 0.46
Digi-Reel® 1$ 1.52
10$ 0.94
100$ 0.63
500$ 0.51
1000$ 0.46
Tape & Reel (TR) 2500$ 0.40
5000$ 0.38
7500$ 0.37

Description

General part information

DMT6009LK3 Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Documents

Technical documentation and resources