Discrete Semiconductor Products

CPH3355-TL-W

Obsolete

MOSFET P-CH 30V 2.5A 3CPH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 2.5A 3CPH

Technical Specifications

Parameters and characteristics for this part

Specification	CPH3355-TL-W

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	172 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	3-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor CPH3355-TL-W	Surface Mount	20 V	2.6 V	1 W	P-Channel	156 mOhm	2.5 A	4 V	10 V	30 V	3-CPH	SC-59 SOT-23-3 TO-236-3	150 °C	MOSFET (Metal Oxide)	3.9 nC	172 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 2.5A (Ta) 1W (Ta) Surface Mount 3-CPH

Technical documentation and resources

No documents available