Discrete Semiconductor Products

PHB18NQ10T,118

Obsolete

MOSFET N-CH 100V 18A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 18A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB18NQ10T,118

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	633 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Nexperia USA Inc. PHB18NQ10T,118	10 V	21 nC	Surface Mount	100 V	90 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	175 °C	-55 °C	18 A	79 W	D2PAK	633 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 18A (Tc) 79W (Tc) Surface Mount D2PAK

Technical documentation and resources