Discrete Semiconductor Products

PMN70EPEX

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MOSFET P-CH 30V 4.4A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET P-CH 30V 4.4A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN70EPEX

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	570 mW, 6.25 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PMN70XPX	550 pF	MOSFET (Metal Oxide)	1.5 V 4.5 V	7.5 nC	4.46 W 530 mW	88 mOhm	-55 °C	150 °C	20 V	6-TSOP	Surface Mount	SC-74 SOT-457	900 mV	12 V	P-Channel
Freescale Semiconductor - NXP PMN70EPEX	370 pF	MOSFET (Metal Oxide)	4.5 V 10 V		6.25 W 570 mW	80 mOhm	-55 °C	150 °C	30 V	6-TSOP	Surface Mount	SC-74 SOT-457	3 V	20 V	P-Channel	4.4 A	11.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4.4A (Ta) 570mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Technical documentation and resources