Discrete Semiconductor Products

NTBGS004N10G

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POWER MOSFET 203 AMPS, 100 VOLTS N-CHANNEL ENHANCEMENT - MODE D2PAK 7L

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Discrete Semiconductor Products

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POWER MOSFET 203 AMPS, 100 VOLTS N-CHANNEL ENHANCEMENT - MODE D2PAK 7L

Technical Specifications

Parameters and characteristics for this part

Specification	NTBGS004N10G

Current - Continuous Drain (Id) @ 25°C	203 A, 21 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	178 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	340 W, 3.7 W
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Power MOSFET 203 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK 7L

Part	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor NTBGS004N10G	4 V	D2PAK TO-263-7	10 V	N-Channel	Surface Mount	21 A 203 A	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	100 V	12100 pF	178 nC	-55 °C	175 ░C	3.7 W 340 W	4.1 mOhm

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General part information

Power MOSFET 203 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK 7L

Technical documentation and resources