Discrete Semiconductor Products

BCW31,215

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TRANS NPN 32V 0.1A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN 32V 0.1A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BCW31,215

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	210 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Transistor Type	Qualification	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP BCW31,215	NPN	AEC-Q101	150 °C	Surface Mount	32 V	100 MHz	SC-59 SOT-23-3 TO-236-3	110	100 mA	250 mW	100 nA	Automotive	TO-236AB	210 mV

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General part information

Bipolar (BJT) Transistor NPN 32 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources