Specification	MJE15030G

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	50 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

MJE15030 Series

Bipolar Transistor, NPN, 150 V, 8.0 A

Part	Package / Case	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJE15030G	TO-220-3	30 MHz	500 mV	50 W	TO-220	8 A	Through Hole	150 V	100 µA	NPN	20	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

Technical documentation and resources