Specification	NTK3134NT1G

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-723
Power Dissipation (Max)	310 mW
Rds On (Max) @ Id, Vgs [Max]	350 mOhm
Supplier Device Package	SOT-723
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.2 V

NTK3134N Series

Single N−Channel Power MOSFET with ESD Protection 20V 890 mA 350 mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor NTK3134NT5G	1.5 V 4.5 V	Surface Mount	120 pF	SOT-723	MOSFET (Metal Oxide)	310 mW	750 mA	SOT-723	-55 °C	150 °C	350 mOhm	6 V	N-Channel	20 V	1.2 V
ON Semiconductor NTK3134NT1G	1.5 V 4.5 V	Surface Mount	120 pF	SOT-723	MOSFET (Metal Oxide)	310 mW	750 mA	SOT-723	-55 °C	150 °C	350 mOhm	6 V	N-Channel	20 V	1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723

Technical documentation and resources