Specification	FDY2000PZ

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	446 mW
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	SOT-563F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDY2000PZ Series

Dual P-Channel Specified PowerTrench® MOSFET -20V, -0.35A, 1.2Ω

Part	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDY2000PZ	2 P-Channel	1.4 nC	350 mA	SOT-563F	20 V	1.2 Ohm	MOSFET (Metal Oxide)	1.5 V	446 mW	SOT-563 SOT-666	100 pF	Logic Level Gate	Surface Mount	-55 °C	150 °C
ON Semiconductor FDY2000PZ	2 P-Channel	1.4 nC	350 mA	SOT-563F	20 V	1.2 Ohm	MOSFET (Metal Oxide)	1.5 V	446 mW	SOT-563 SOT-666	100 pF	Logic Level Gate	Surface Mount	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= - 2.5V.