
Deep-Dive with AI
Search across all available documentation for this part.

Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | H11D1VM |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 80 mA |
| Current - Output / Channel | 100 mA |
| Current Transfer Ratio (Min) [Min] | 20 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Turn On / Turn Off Time (Typ) | 5 µs |
| Vce Saturation (Max) [Max] | 400 mV |
| Voltage - Forward (Vf) (Typ) | 1.15 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) [Max] | 300 V |
H11D1M Series
6-pin DIP High Voltage Phototransistor Output Optocoupler
| Part | Mounting Type | Current Transfer Ratio (Min) [Min] | Current - Output / Channel | Turn On / Turn Off Time (Typ) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) [Max] | Number of Channels | Operating Temperature [Max] | Operating Temperature [Min] | Vce Saturation (Max) [Max] | Voltage - Output (Max) [Max] | Supplier Device Package | Input Type | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | Surface Mount | 20 % | 100 mA | 5 µs | 4170 Vrms | 1.15 V | 80 mA | 1 | 100 °C | -40 °C | 400 mV | 300 V | 6-SMD | DC | 6-SMD Gull Wing | ||
ON Semiconductor | Surface Mount | 20 % | 100 mA | 5 µs | 4170 Vrms | 1.15 V | 80 mA | 1 | 100 °C | -40 °C | 400 mV | 300 V | 6-SMD | DC | 6-SMD Gull Wing | ||
ON Semiconductor | |||||||||||||||||
ON Semiconductor | Surface Mount | 20 % | 100 mA | 5 µs | 4170 Vrms | 1.15 V | 80 mA | 1 | 100 °C | -40 °C | 400 mV | 300 V | 6-SMD | DC | 6-SMD Gull Wing | ||
ON Semiconductor | Through Hole | 20 % | 100 mA | 5 µs | 4170 Vrms | 1.15 V | 80 mA | 1 | 100 °C | -40 °C | 400 mV | 300 V | 6-DIP | DC | 6-DIP | 0.3 in | 7.62 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1000 | $ 0.36 | |
| 1000 | $ 0.36 | |||
| Tube | 1 | $ 0.71 | ||
| 1 | $ 0.71 | |||
| 50 | $ 0.45 | |||
| 50 | $ 0.45 | |||
| 100 | $ 0.33 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.32 | |||
| 500 | $ 0.32 | |||
| Newark | Each | 1000 | $ 0.42 | |
| 2500 | $ 0.34 | |||
| 10000 | $ 0.33 | |||
| ON Semiconductor | N/A | 1 | $ 0.34 | |
Description
General part information
H11D1M Series
The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Documents
Technical documentation and resources