Specification	EMB11FHAT2R

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Qualification	AEC-Q101
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	EMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV

EMB11 Series

Part	Resistor - Emitter Base (R2)	Mounting Type	Qualification	Vce Saturation (Max) @ Ib, Ic	Grade	Supplier Device Package	Transistor Type	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor EMB11FHAT2R	10 kOhms	Surface Mount	AEC-Q101	300 mV	Automotive	EMT6	2 PNP - Pre-Biased (Dual)	250 MHz	SOT-563 SOT-666	30	100 mA
Rohm Semiconductor EMB11T2R	10 kOhms	Surface Mount		300 mV		EMT6	2 PNP - Pre-Biased (Dual)	250 MHz	SOT-563 SOT-666		100 mA	500 nA	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6