Specification	NTD4969NT4G

Current - Continuous Drain (Id) @ 25°C	41 A, 9.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	837 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.38 W, 26.3 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTD4969N Series

Single N-Channel Power MOSFET 30V, 41A, 9mΩ

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor NTD4969NT4G	30 V	-55 °C	175 ░C	2.5 V	1.38 W 26.3 W	Surface Mount	20 V	9.4 A 41 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	9 mOhm	N-Channel	837 pF	9 nC	4.5 V 10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET, 30 V, 41 A, Single N Channel, DPAK/IPAK

Technical documentation and resources