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X2-DFN1006-3
Discrete Semiconductor Products

DMN62D1LFB-7B

Active
Diodes Inc

TRANS MOSFET N-CH 60V 0.32A 3-PIN DFN SMD T/R

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X2-DFN1006-3
Discrete Semiconductor Products

DMN62D1LFB-7B

Active
Diodes Inc

TRANS MOSFET N-CH 60V 0.32A 3-PIN DFN SMD T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D1LFB-7B
Current - Continuous Drain (Id) @ 25°C320 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.9 nC
Input Capacitance (Ciss) (Max) @ Vds64 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]2 Ohm
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

DMN62D1LFDQ Series

60V Dual N-Channel Enhancement Mode MOSFET

PartVgs (Max)Package / CaseDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsTechnologyPower Dissipation (Max)FET TypeDrive Voltage (Max Rds On, Min Rds On) [Max]Drive Voltage (Max Rds On, Min Rds On) [Min]Operating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsVgs(th) (Max) @ Id [Max]Supplier Device PackageMounting TypeCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)QualificationVgs(th) (Max) @ IdGradePower Dissipation (Max) [Max]Power - Max [Max]ConfigurationRds On (Max) @ Id, Vgs [Max]Gate Charge (Qg) (Max) @ Vgs [Max]
3-UDFN
Diodes Inc
20 V
3-UDFN
60 V
30.2 pF
0.87 nC
MOSFET (Metal Oxide)
430 mW
N-Channel
10 V
5 V
-55 °C
150 °C
2 Ohm
2.5 V
X1-DFN1212-3
Surface Mount
SOT-23-3
Diodes Inc
20 V
SC-59
SOT-23-3
TO-236-3
60 V
41 pF
0.8 nC
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
2 Ohm
SOT-23-3
Surface Mount
390 mA
1.8 V
5 V
AEC-Q101
1 V
Automotive
500 mW
Package Image for SOT363
Diodes Inc
6-TSSOP
SC-88
SOT-363
60 V
41 pF
0.8 nC
MOSFET (Metal Oxide)
-55 °C
150 °C
2 Ohm
SOT-363
Surface Mount
340 mA
1 V
300 mW
2 N-Channel
3-XDFN
Diodes Inc
20 V
3-UDFN
60 V
36 pF
0.55 nC
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
X1-DFN1212-3
Surface Mount
400 mA
1.8 V
4 V
1 V
500 mW
2 Ohm
SOT-23-3
Diodes Inc
20 V
SC-59
SOT-23-3
TO-236-3
60 V
32 pF
MOSFET (Metal Oxide)
380 mW
N-Channel
-55 °C
150 °C
2 Ohm
SOT-23-3
Surface Mount
380 mA
1.8 V
4.5 V
1 V
0.5 nC
Package Image for X1-DFN1212-3
Diodes Inc
20 V
3-PowerUDFN
60 V
36 pF
0.55 nC
MOSFET (Metal Oxide)
N-Channel
1.5 V
4 V
-55 °C
150 °C
U-DFN1212-3 (Type C)
Surface Mount
400 mA
AEC-Q101
1 V
Automotive
500 mW
2 Ohm
Package Image for SOT363
Diodes Inc
6-TSSOP
SC-88
SOT-363
60 V
41 pF
0.8 nC
MOSFET (Metal Oxide)
-55 °C
150 °C
2 Ohm
SOT-363
Surface Mount
340 mA
1 V
300 mW
2 N-Channel
SOT-523
Diodes Inc
20 V
SOT-523
60 V
32 pF
MOSFET (Metal Oxide)
230 mW
N-Channel
-55 °C
150 °C
2 Ohm
SOT-523
Surface Mount
320 mA
1.8 V
2.5 V
4.5 V
1 V
0.5 nC
X2-DFN1006-3
Diodes Inc
20 V
3-UFDFN
60 V
64 pF
MOSFET (Metal Oxide)
N-Channel
1.5 V
4 V
-55 °C
150 °C
X1-DFN1006-3
Surface Mount
320 mA
1 V
500 mW
2 Ohm
0.9 nC
SOT-23-3
Diodes Inc
20 V
SC-59
SOT-23-3
TO-236-3
60 V
32 pF
MOSFET (Metal Oxide)
380 mW
N-Channel
-55 °C
150 °C
2 Ohm
SOT-23-3
Surface Mount
380 mA
1.8 V
4.5 V
1 V
0.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Digi-Reel® 1$ 0.39
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.