Discrete Semiconductor Products

PSMN7R0-30YL,115

NRND

MOSFET N-CH 30V 76A LFPAK56

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 76A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R0-30YL,115

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PSMN7R0-30MLC,115	20 V	17.9 nC	67 A	2.15 V	LFPAK33	7 mOhm	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	4.5 V 10 V	57 W	30 V	1076 pF
Freescale Semiconductor - NXP PSMN7R0-30YL,115	20 V		76 A	2.15 V	LFPAK56 Power-SO8	7 mOhm	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	4.5 V 10 V	51 W	30 V	1270 pF	SC-100 SOT-669	22 nC
Freescale Semiconductor - NXP PSMN7R0-100PS,127	20 V	125 nC	100 A		TO-220AB	12 mOhm	N-Channel	MOSFET (Metal Oxide)			Through Hole	10 V		100 V	6686 pF	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 76A (Tc) 51W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources