71V632S5PFGI
Obsolete3.3V 64K X 32 SYNCHRONOUS PIPELINED BURST SRAM
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71V632S5PFGI
Obsolete3.3V 64K X 32 SYNCHRONOUS PIPELINED BURST SRAM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V632S5PFGI |
|---|---|
| Access Time | 5 ns |
| Clock Frequency | 100 MHz |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 64 K, 32 |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x14) |
| Technology | SRAM - Synchronous, SDR |
| Voltage - Supply [Max] | 3.63 V |
| Voltage - Supply [Min] | 3.135 V |
71V632 Series
3.3V 64K x 32 Synchronous PipeLined Burst SRAM
| Part | Technology | Access Time | Memory Size | Clock Frequency | Memory Type | Memory Organization | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Format | Mounting Type | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | SRAM - Synchronous SDR | 5 ns | 2 Gbit | 100 MHz | Volatile | 32 64 K | 100-TQFP (14x14) | 3.63 V | 3.135 V | Parallel | SRAM | Surface Mount | 100-LQFP | 70 °C | 0 °C |
Renesas Electronics Corporation | SRAM - Synchronous SDR | 7 ns | 2 Gbit | 66 MHz | Volatile | 32 64 K | 100-TQFP (14x14) | 3.63 V | 3.135 V | Parallel | SRAM | Surface Mount | 100-LQFP | 70 °C | 0 °C |
 Renesas Electronics Corporation | SRAM - Synchronous SDR | 7 ns | 2 Gbit | 66 MHz | Volatile | 32 64 K | 100-TQFP (14x14) | 3.63 V | 3.135 V | Parallel | SRAM | Surface Mount | 100-LQFP | 70 °C | 0 °C |
Renesas Electronics Corporation | SRAM - Synchronous SDR | 5 ns | 2 Gbit | 100 MHz | Volatile | 32 64 K | 100-TQFP (14x14) | 3.63 V | 3.135 V | Parallel | SRAM | Surface Mount | 100-LQFP | 85 °C | -40 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
71V632 Series
The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Documents
Technical documentation and resources