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SOT 23-3
Discrete Semiconductor Products

NSS30100LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 30 V, 1 A, 710 MW, SOT-23, SURFACE MOUNT

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SOT 23-3
Discrete Semiconductor Products

NSS30100LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 30 V, 1 A, 710 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS30100LT1G
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]310 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.35
100$ 0.22
500$ 0.17
1000$ 0.15
Digi-Reel® 1$ 0.57
10$ 0.35
100$ 0.22
500$ 0.17
1000$ 0.15
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.10
75000$ 0.09
NewarkEach (Supplied on Full Reel) 3000$ 0.14
6000$ 0.12
12000$ 0.11
18000$ 0.10
30000$ 0.09
ON SemiconductorN/A 1$ 0.10

Description

General part information

NSS30100L Series

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.