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EMT6_EMT6 PKg
Discrete Semiconductor Products

EM6K31GT2R

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Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

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EMT6_EMT6 PKg
Discrete Semiconductor Products

EM6K31GT2R

Active
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationEM6K31GT2R
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C250 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate, 2.5V Drive
Input Capacitance (Ciss) (Max) @ Vds [Max]15 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-563, SOT-666
Power - Max [Max]120 mW
Rds On (Max) @ Id, Vgs2.4 Ohm
Supplier Device PackageEMT6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.50
10$ 0.31
100$ 0.19
500$ 0.15
1000$ 0.13
2000$ 0.12
Digi-Reel® 1$ 0.50
10$ 0.31
100$ 0.19
500$ 0.15
1000$ 0.13
2000$ 0.12
N/A 0$ 0.50
Tape & Reel (TR) 8000$ 0.10
16000$ 0.09
24000$ 0.08
40000$ 0.08
56000$ 0.08
80000$ 0.07

Description

General part information

EM6K31 Series

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Documents

Technical documentation and resources