Discrete Semiconductor Products

UPA1770G-E1-A

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1770G-E1-A

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max [Max]	750 mW
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Power MOSFETs for Automotive

Part	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Package / Case	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max
Renesas Electronics Corporation UPA1770G-E1-A	MOSFET (Metal Oxide)	37 mOhm	6 A	150 °C	8-SOP	8-SOIC (0.173" 4.40mm Width)	750 mW	20 V	Surface Mount	1300 pF	1.5 V	2 P-Channel (Dual)	11 nC
Renesas Electronics Corporation UPA1770G-E1-A	MOSFET (Metal Oxide)	37 mOhm	6 A	150 °C				20 V	Surface Mount	1300 pF		2 P-Channel (Dual)	11 nC	400 mW 750 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pch Dual Power MOSFET -20V -6. 0A 37mohm Power SOP8 Automotive

Technical documentation and resources