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TO-220-3
Discrete Semiconductor Products

NTP150N65S3HF

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 24 A, 150 MΩ, TO-220

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TO-220-3
Discrete Semiconductor Products

NTP150N65S3HF

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 24 A, 150 MΩ, TO-220

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Technical Specifications

Parameters and characteristics for this part

SpecificationNTP150N65S3HF
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1985 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)192 W
Rds On (Max) @ Id, Vgs150 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.18
10$ 2.80
100$ 2.29
NewarkEach 1$ 5.02
10$ 4.83
25$ 4.41
50$ 4.00
100$ 3.91
250$ 3.90
500$ 3.75
ON SemiconductorN/A 1$ 2.11

Description

General part information

NTP150N65S3HF Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.