Discrete Semiconductor Products

RQ5C020TPTL

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MOSFET, P-CH, -2A, -20V, SOT-346T

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Discrete Semiconductor Products

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MOSFET, P-CH, -2A, -20V, SOT-346T

Technical Specifications

Parameters and characteristics for this part

Specification	RQ5C020TPTL

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.9 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	135 mOhm
Supplier Device Package	TSMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Pch -20V -2A Small Signal MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Rohm Semiconductor RQ5C020TPTL	4.9 nC	12 V	TSMT3	Surface Mount	2.5 V	4.5 V	SC-96	MOSFET (Metal Oxide)	2 V	20 V	150 °C	P-Channel	430 pF	135 mOhm	2 A	700 mW

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General part information

RQ5C020TP is a MOSFET with G-S Protection Diode and low on-switching, suitable for load switch.

Technical documentation and resources