Discrete Semiconductor Products

NP16N06QLK-E1-AY

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MOSFET 2N-CH 60V 16A 8HSON

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 16A 8HSON

Technical Specifications

Parameters and characteristics for this part

Specification	NP16N06QLK-E1-AY

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerLDFN
Power - Max	25 W, 1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	8-HSON (5x5.4)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Grade	Power - Max	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Package / Case	Qualification	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type
Renesas Electronics Corporation NP16N06QLK-E1-AY	60 V	MOSFET (Metal Oxide)	39 mOhm	8-HSON (5x5.4)	750 pF	2 N-Channel (Dual)	Automotive	1 W 25 W	16 A	175 °C	8-PowerLDFN	AEC-Q101	17 nC	2.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 16A (Tc) 1W (Ta), 25W (Tc) Surface Mount 8-HSON (5x5.4)

Technical documentation and resources