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PowerDI3333-8
Discrete Semiconductor Products

DMN3030LFG-13

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Search across all available documentation for this part.

PowerDI3333-8
Discrete Semiconductor Products

DMN3030LFG-13

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3030LFG-13
Current - Continuous Drain (Id) @ 25°C5.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds751 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]900 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DMN3030LFG Series

NRND = Not Recommended for New Design

Documents

Technical documentation and resources